Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on PEN eBook December 2025, SiC and GaN Markets, and DC/DC Converters in BESS!

The MLX90296 contactless linear sensor combines digital flexibility, ultra low power consumption, adaptable polarity modes, and a space-saving form factor.

The new TSZ901 op-amp ensures stable, high-precision operation over the full −40°C to 125°C temperature range.

“This discovery is a new pathway toward environmentally responsible technologies that can power sensors,” says Dr. Dominik Kubicki.

Ultra-low-noise JFETs are suitable for analog front ends, discrete op amps, and low-noise amplifiers.

The SMD capacitors are offered with rated voltages ranging from 25 V to 80 V and capacitance values between 56 µF and 1100 µF.

Vishay Intertechnology Inc., a global manufacturer of passive and discrete solutions, kicked off the launch of its new MAACPAK power modules, catering to silicon carbide (SiC) MOSFETs. These offer large improvements over many industry-standard SiC modules on the market while still maintaining compatibility with existing solutions. Vishay’s improvements over its previous power module generation, EMIPAK, reduce stray inductance—a key bottleneck—significantly, allowing internal SiC MOSFETs to switch efficiently at higher frequencies; this effectively shrinks solution size.

The new wafer fab introduces advanced GaN and SiC manufacturing, positioning Malaysia to enter front-end semiconductor production for the first time.

NTT, Inc. has demonstrated amplification of high-frequency wireless signals using aluminum nitride (AlN)–based transistors. 

Wolfspeed announced Toyota will deploy its automotive-grade SiC MOSFETs to power onboard charging across its BEV lineup.

SiC and GaN stand center stage, controlling many different industries’ dynamics.

As we close out 2025, we take a closer look at advances in motor control systems impacting industries ranging from industrial automation and control to military and automotive.

In power electronics, moving to 300mm SiC wafers increases the number of devices per substrate and helps drive down the cost of each chip.

In industrial systems, many devices require a lower voltage. This is where DC/DC power modules come into play, where the power supply is reliable, efficient, and EMC-compliant.

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Digital Power Supply Control, SiC in AC Motor Drives, and Small Fusion Reactors!

Empower announced a new corporate headquarters in Milpitas, California, and a dedicated R&D center in Munich, Germany.

WBG semiconductors are changing the way modern technology works. Materials such as GaN and SiC are changing the game in power electronics.

The newly introduced SiC MOSFETs shrink the component size by about 26% and feature an ultra-thin 2.3 mm profile.

The components provide reliable inrush current limiters performance for switch-mode supplies, frequency converters, photovoltaic inverters, UPS units, and soft-start motors.

Diodes Inc. launches programmable 5.5V/4A buck converter with I2C interface for tightly-integrated automotive point-of-load (PoL) designs.

The XP Power SiC 10-kW PSU uses a high-voltage digital control loop for on-the-fly adjustments that previously required manual intervention.

We explore the LPM-MSPM0G3519 LaunchPad development kit, a feature-rich platform built around TI’s MSPM0G3519 ARM Cortex-M0+ microcontroller.

SemiQ expands 1200 V QSiC Gen3 portfolio with six-pack B2, full-bridge B3, and half-bridge S3 power modules.

While silicon IGBTs remain dominant in AC motor drives, the performance and cost improvements from SiC make a compelling case for evaluating the overall system benefits.

The new AEM15820 PMIC supports energy harvesting from lighting conditions ranging from indoor illumination to full outdoor sunlight.

Onsemi announces the availability of its 650V and 950V EliteSiC in the widely-adopted T2PAK package for top-side cooling. 

With the shift toward electrification, electro-hydrostatic actuators will play an even larger role in next-generation motion systems.

Taiyo Yuden’s hybrid capacitors target integration into automotive SiC and GaN power circuits.

High-accuracy and high-efficiency power monitor technology enables battery-powered designs to sustain longer operational periods under typical conditions.

AOS will contribute its innovative power solutions for data centers to help make the leap from 54 VDC to an Nvidia-led 800-VDC system.

Melexis debuted its monolithic silicon RC snubber designed explicitly for SiC power modules.

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on SiC-Based Multiport SST, Enphase IQ9 Microinverter, and PEN’s Power Prediction for 2025!

The new VIPerGaN65W enables designers to create efficient, cost-effective USB-PD chargers, fast battery chargers, and auxiliary power supplies.

This article introduces some concepts behind a small fusion reactor, called Orbitron, that has been proposed by Avalanche Energy.

The new X4-Class device improves thermal management, boosts efficiency, and reduces components in energy, charging, drone, and industrial systems.

An interview with the co-founders of DG Matrix sheds light on its SiC-based multiport SST backed by multiple patents.

Navitas' new UHV SiC use novel trench gate structures to effectively handle common failure modes associated with trench-based MOSFETs.

The coming decade will bring a convergence of digital, biological, environmental, and demographic systems that will strain our institutions.

The Riedon™ BRF Series combines high power handling with tightly controlled TCR performance, enabling highly efficient and dependable energy dissipation in precision electronic circuits.

IQ9 is Enphase’s first microinverter based on gallium nitride (GaN) technology, specifically designed for three-phase 480Y/277 V grid configurations without requiring external transformers.

Designed for modern motor-drive applications, the high-efficiency GaN power integration solution targets both white goods and factory automation systems.

Here’s a RoundUp of this month’s must-read news about SiC, GaN, and Wide Bandgap Materials!

Onsemi, the US-based vertically integrated SiC manufacturer, recently secured €450 million of Czech State aid with the European Commission’s approval to build an integrated chip manufacturing plant for SiC power devices. The Rožnov pod Radhoštěm, Czech Republic fab would be Onsemi’s only European-based SiC manufacturing facility outside of the two North American fabs located in Hudson, New Hampshire, and East Fishkill, New York, and a large Asia Pacific fab in Bucheon, Korea. 

The World Economic Forum (WEF) is a global organization that gathers leaders from business, government, academia, and civil society to address the world’s most pressing challenges. For more than two decades, its annual Global Risks Report (GRR) has mapped the most serious threats facing humanity—from economic instability and climate change to geopolitical conflict and disruptive technologies. The 2025 edition, based on insights from over 900 experts worldwide, provides a snapshot of an increasingly unstable landscape.

2025 brought in a stream of steady innovations in semiconductor manufacture and the application of wideband gap (WBG) technology.

GlobalFoundries has further expanded its GaN reach in the U.S. in a long-term partnership with Navitas, announced last week.

The two new patents from Huawei reflect a broader trend: the diversification of SiC applications across the electronics value chain.

STMicroelectronics released the IPS1050LQ single-channel low-side switch IC, offering flexible overcurrent protection.

Research hub Silicon Austria Labs has successfully fabricated its first 8-inch thin-film lithium niobate wafer entirely in-house.

Wolfspeed recently announced its 1200-V (up to 700-A) SiC six-pack power modules for e-mobility propulsion, such as high-power inverters. Power modules offer extensive design optimizations over discrete implementations, minimizing the layout burdens around thermal management, isolation, and electromagnetic interference (EMI). The YM Six-Pack Power Modules feature a pin-fin cooling design with fins on the module's base plate, allowing them to be submerged directly in coolant in inverters, e.g., traction inverters.