AbstractTwo-dimensional (2D) materials are promising resistive switching materials for vertical memristors due to their ultimate thinness and low-power ope

npj 2D Materials and Applications - Proof of concept of a graphene-based reconfigurable frequency multiplier fabricated within the 2D Experimental Pilot Line

Wafer-scale patterning of metal halide perovskite films is demonstrated on 150 mm substrates using a chemically amplified resist, polymethyl methacrylate (CAR-PMMA) and a single reactive ion etching ....

Hardware realization of neuromorphic computing with a 4–port photonic reservoir for modulation format identification, Şeker, Enes, Thomas, Rijil, von Hünefeld, Guillermo, Suckow, Stephan, Kaveh, Mahdi...

Drift is a major source of error affecting the accuracy and repeatability of sensors. A Wheatstone bridge (WSB) enables high sensitivity, accuracy, and the elimination of common-mode drift. We apply ...

A photonic Mach-Zehnder switch based on graphene heaters and the non-volatile phase change material (PCM) Sb2Se3 is presented to address the challenge of high energy consumption in neuromorphic photo...

Leakage current affects the operation and reliability of electronic devices, but obtaining accurate measurements of leakage current across two-dimensional (2D) materials has been difficult. This artic...

Nature Communications - Graphene and related two-dimensional (2D) materials have remained an active field of research in science and engineering for over fifteen years. Here, the authors...

MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yieldi....

Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx-only devices, these heterostructures...

The rapid growth of artificial intelligence (AI) is increasingly constrained by fundamental hardware bottlenecks in computation throughput and energy efficiency. Bioinspired computing (BIC) offers a p...

Passive rectifiers in radio frequency (RF) energy-harvesting applications require viable zero-bias responsivities to achieve significant RF-to-DC conversion efficiencies. While conventional metal–insu...

npj 2D Materials and Applications - Water-based, large-scale transfer of 2D materials grown on sapphire substrates

npj 2D Materials and Applications - High UV sensitivity in graphene-silicon Schottky photodiodes in industry standard packaging

Boron nitride (BN) films are deposited by sputtering from a boron target. During deposition, a substrate bias voltage is applied between the plasma and the sample, which reduces excess boron in the f...

Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx-only devices, these heterostructures....

Terahertz (THz) technology enables nondestructive characterization of conductive thin films but faces challenges in analyzing ultrathin, weakly conductive two-dimensional materials because of their we...

Molecular fingerprinting for the detection of biomolecules is highly sensitive and noninvasive through the surface-enhanced Raman scattering (SERS) effect. This is a report on the commercially compet....

The rapid growth of artificial intelligence (AI) is increasingly constrained by fundamental hardware bottlenecks in computation throughput and energy efficiency. Bioinspired computing (BIC) offers a p...

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III−V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established. Here, the first methylammonium lead iodide perovskite microdisc lasers monolithically integrated into silicon nitride PICs by such a top-down process are presented. The lasers show a record low lasing threshold of 4.7 μJcm–2 at room temperature for monolithically integrated lasers, which are complementary metal–oxide–semiconductor compatible and can be integrated in the back-end-of-line processes.

Designing optoelectronic devices based on cesium lead chloride (CsPbCl3) perovskites requires accurate values of their optical constants. Unfortunately, experim

Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential ste...

The current conduction mechanisms of hexagonal boron nitride-based threshold memristors with nickel electrodes in high and low resistance states are investigated by temperature-dependent current-volt...

This article presents the first monolithic integration of nanoscale MoS2-based memristors into the back-end-of-line of foundry-fabricated CMOS microchips in a one-transistor-one-resistor (1T1R) archi....

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Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional...

Cryogenic field-effect transistors (FETs) offer great potential for applications, the most notable example being classical control electronics for quantum information processors. For the latter, on-chip FETs with low power consumption are crucial. This requires operating voltages in the millivolt range, which are only achievable in devices with ultrasteep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 μV/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van der Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.