Low-loss phononic integrated circuits based on a silicon nitride-lithium niobate platform
dlvr.it
Low-loss phononic integrated circuits based on a silicon nitride-lithium niobate platform
Communications Engineering, Published online: 30 September 2026; doi:10.1038/s44172-026-00795-1Jun Ji and colleagues develop a low-loss gigahertz-frequency phononic integrated circuits platform based on patterned thin-film silicon nitride on lithium niobate substrate. Our waveguides achieve a propagation fQ product of 4.22×1013 Hz, and a 1-GHz ring-resonator-based oscillator reaches a phase noise of −159 dBc/Hz at a 100-kHz offset.